| A New Paradigm for Solar Energy Conversion: Non-Radiative Energy Transfer |
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See University of Southern California, A New Paradigm for Solar Energy Conversion, http://nanostructure.usc.edu/research/solar.shtml (as of Nov. 15, 2008, 04:24 GMT).
Siyuan Lu, Anupam Madhukar, "Nonradiative Resonant Excitation Transfer from Nanocrystal Quantum Dots to Adjacent Quantum Channels", Nano Letters, 7, 3443-3451 (2007)
Historically, the earliest photovoltaic solar cells were investigated in silicon p-n junction devices [1] where the absorption and the created electron-hole pair separation and transport are processes that occur in the same medium. With the development of semiconductor epitaxial deposition techniques, the silicon pn junction solar cells have been augmented with III-V compound semiconductor multiple quantum well based solar cells [2] which exhibit the highest efficiencies although remain also the most expensive to produce.
Nonradiative Coupling
Figure 1. Schematic showing a new solar cell architecture utilizing nonradiative couplingbetween dipoles for direct transfer of energy from the excitons created in the light absorber to (a) quantum well (b) nanowire high mobility charge carrier transport channels.
Figure 2 shows the room temperature time decay behavior of the luminescence peak of the NCQDs at 965nm. Note the considerably fast decay time of ~207ns in the presence of the quantum well as compared to the ~300ns decay time on the GaAs control substrate. The reduction of the NCQD PL decay time from ~300ns to ~207ns is the manifestation of the opening of an excitation transfer channel provided by the one-dimensionally confined states of the quantum well (Fig.2). From the difference between these two measured decay times, we calculate the nonradiative transfer rate to be ~ 1/(690ns), ~1.4 times faster than their radiative decay rate ~ 1/(960ns) measured for the NCQDs dispersed on a glass substrate. This means for a nanocrystal of 100% quantum yield, the efficiency of the nonradiative transfer from the NCQD to the quantum well is ~60% for the 8.2 nm center-to-center separation of the PbS NCQDs adn the InGaAs QW in these experiments. The transfer efficiency is expected to be further improved by reducing the distance between the NCQDs and the NSQW. Fig. 2. Time resolved PL of PbS NCs on passivated GaAs (blue) and on passivated NSQW (Red). Excited at 900nm (below GaAs bandgap) and detected at 965nm (PbS PL peak). TRPL curves are fitted using stretched exponential function. References: [1] Shockley, W.; and Queisser, H. J.; Jour. App. Phys. 1963, 32, 510-519. [2] King, R. R.; Law, D. C.; Edmondson, K. M.; Fetzer, C. M.; Kinsey, G. S.; Yoon, H.; Sherif, R. A.; Karam, N. H.; Appl. Phys. Lett., 2007, 90, 183516. [3] Oregan, B.; Gratzel, M.; Nature, 1991, 353, 737-740. [4] Hoppe, H.; Sariciftci, N. S.; J. Mater. Res. 2004, 19, 1924-1945. [5] Kim, J. Y. ; Lee, K. ; Coates, N. E. ; Moses, D. ; Nguyen, T. Q. ; Dante, M. ; Heeger, A. J. ; Science 2007, 317, 222-225. [6] Nozik, A. J. Physica E, 2002, 14, 115; Gur, I.; Fromer, N. A.; Alivisatos, A. P.; J. Phys. Chem. B 2006, 110, 25543-25546. [7] Weisbuch, C. Fundamental properties of III-V semiconductor two-dimensional quantized structures: The basis for optical and electronic device applications, Ch.1 in Semiconductors and Semimetals: Application of Multiquantum Wells, Selective Doping, and Superlattices, Ed. R. Dingle, Academic Press, New York, (1987); Interfaces, Quantum Wells, and Superlattices, Eds, C. R. Leavens and R. Taylor Plenum, New York, (1988). [8] Madhukar, A.; Thin Solid Films, 1993, 231, 8-42. [9] Konkar, A.; Madhukar, A.; Chen, P.; Appl. Phys. Lett., 1998, 72, 220-222. [10] Kiravittaya, S.; Heidemeyer, H.; Schmidt, O. G.; Physica E, 2004, 23, 253-259. [11] Westwater, J.; Gosain, D. P.; Tomiya, S.; Usui, S.; Ruda, H. J.; Vac. Sci. Technol. B, 1997, 15, 554-557. [12] Dick, K. A.; Deppert, K.; Karlsson, L. S.; Wallenberg, L. R.; Samuelson, L.; Seifert, W.; Advanced Functional Materials, 2005, 15, 1603-1610; Zhong, Z. H.; Qian, F.; Wang, D. L.; Lieber, C. M.; Nano Lett., 2003, 3, 343-346; Kim, Y.; Joyce, H. J.; Gao, Q.; Tan, H. H.; Jagadish, C.; Paladugu, M.; Zou, J.; Suvorova, A.; Nano Lett., 2006, 6,599 - 604. [13] Förster, Th.; Annu. Rev. Phys., 1948, 2, 55-75; Förster, Th.; Discuss. Faraday Soc., 1959, 27, 7-17. [14] Lu, S.; Madhukar, A.; Nano Lett. 2007, 7, 3443-3451. |